Infineon FS25R12W1T4_B11 IGBT模块 IGBT模块 25A 1200V
制造商Infineon(查看更多该品牌的产品)
ModelFS25R12W1T4_B11
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Technology: Si
Unit Weight: 24 g
REACH - SVHC: Details
Configuration: 6-Pack
Pd - Power Dissipation: 205 W
Gate-Emitter Leakage Current: 400 nA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.85 V
Continuous Collector Current at 25 C: 45 A
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