Infineon FS3L30R07W2H3FB11BPSA2 SiC IGBT 模块 650 V，30 A 三电平 IGBT 模块
制造商Infineon(查看更多该品牌的产品)
ModelFS3L30R07W2H3FB11BPSA2
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Technology: SiC
Unit Weight: 39 g
Configuration: 3-Phase Inverter
Mounting Style: Press Fit
Gate-Emitter Leakage Current: 100 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 650 V
Collector-Emitter Saturation Voltage: 1.5 V
Continuous Collector Current at 25 C: 30 A
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