Infineon FS75R12KS4 IGBT 硅模块 1200V 75A 三相

Width: 62 mm

Height: 17 mm

Length: 122 mm

Technology: Si

Unit Weight: 300 g

REACH - SVHC: Details

Configuration: 6-Pack

Mounting Style: Screw Mount

Pd - Power Dissipation: 500 W

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 3.2 V

Continuous Collector Current at 25 C: 100 A