Infineon IGW60T120FKSA1 IGBT晶体管 低损耗IGBT技术 1200V 60A

Technology: Si

Unit Weight: 5.420 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 375 W

Gate-Emitter Leakage Current: 600 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.7 V

Continuous Collector Current at 25 C: 100 A