Infineon IKB20N60T IGBT晶体管 低损耗 双包装 600V 20A

Width: 9.45 mm

Height: 4.57 mm

Length: 10.31 mm

Technology: Si

Unit Weight: 2 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 166 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 1.5 V

Continuous Collector Current at 25 C: 41 A