快速支持
直接联系认证专家
Technology: Si
Unit Weight: 5 g
Configuration: Single
Mounting Style: Through Hole
Pd - Power Dissipation: 70 W
Gate-Emitter Leakage Current: 100 nA
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 1.7 V
Continuous Collector Current at 25 C: 16 A
