Infineon IKW15N120H3FKSA1 IGBT晶体管 IGBT产品

Technology: Si

Unit Weight: 1.810 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 217 W

Gate-Emitter Leakage Current: 600 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 2.05 V

Continuous Collector Current at 25 C: 30 A