Infineon IMBG65R030M1HXTMA1 碳化硅MOSFET

Technology: SiC

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Qg - Gate Charge: 49 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 234 W

Vgs - Gate-Source Voltage: - 5 V, + 23 V

Id - Continuous Drain Current: 63 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 42 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 5.7 V