Infineon IPA60R190E6 MOSFETs N沟道 650V 20.2A TO220FP-3 CoolMOS E6

Width: 4.85 mm

Height: 16.15 mm

Length: 10.65 mm

Fall Time: 8 nS

Rise Time: 10 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 63 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 151 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-Off Delay Time: 90 nS

Id - Continuous Drain Current: 20.2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 190 mOhms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 3.5 V