Infineon IPB015N04N G MOSFET N沟道 40V 120A D2PAK-2 OptiMOS 3

Width: 9.25 mm

Height: 4.4 mm

Length: 10 mm

Fall Time: 13 ns

Rise Time: 10 ns

Technology: Si

Unit Weight: 4 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 250 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 250 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 40 ns

Typical Turn-Off Delay Time: 64 ns

Id - Continuous Drain Current: 120 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 120 S

Rds On - Drain-Source Resistance: 1.2 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 2 V