Infineon IPD50P04P4L11ATMA1 MOSFETs P型 -40V -50A DPAK-2 OptiMOS-P2

Width: 6.22 mm

Height: 2.3 mm

Length: 6.5 mm

Fall Time: 39 ns

Rise Time: 9 ns

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 45 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 58 W

Vgs - Gate-Source Voltage: - 16 V, + 5 V

Typical Turn-On Delay Time: 12 ns

Typical Turn-Off Delay Time: 46 ns

Id - Continuous Drain Current: 50 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 17.2 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 1.2 V