Infineon IRFHM830TRPBF HEXFET 功率 MOSFET 30V 1 N-沟道 HEXFET 功率 MOSFET 3.8毫欧

Width: 3.3 mm

Height: 1.05 mm

Length: 3.3 mm

Fall Time: 9.2 ns

Rise Time: 25 ns

Technology: Si

Unit Weight: 122.136 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 31 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2.7 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 12 ns

Typical Turn-Off Delay Time: 13 ns

Id - Continuous Drain Current: 21 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 52 S

Rds On - Drain-Source Resistance: 4.8 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.8 V