Infineon IRG4BC40KPBF IGBT晶体管 600V 超高速 8-25KHZ 离散IGBT

Width: 4.69 mm

Height: 8.77 mm

Length: 10.54 mm

Technology: Si

Unit Weight: 6 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 160 W

Maximum Gate Emitter Voltage: - 20 V, + 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 42 A

Collector-Emitter Saturation Voltage: 2.7 V

Continuous Collector Current at 25 C: 42 A