Infineon IRGB4060DPBF IGBT晶体管 600V 超快沟槽IGBT

Width: 4.83 mm

Height: 16.51 mm

Length: 10.67 mm

Technology: Si

Unit Weight: 6 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 99 W

Maximum Gate Emitter Voltage: - 20 V, + 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 16 A

Collector-Emitter Saturation Voltage: 1.55 V

Continuous Collector Current at 25 C: 16 A