Infineon IRGS4607DPBF IGBT晶体管 600V 沟槽超快IGBT

Technology: Si

Unit Weight: 260.400 mg

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 58 W

Gate-Emitter Leakage Current: +/- 100 nA

Maximum Gate Emitter Voltage: - 20 V, + 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 7 A

Collector-Emitter Saturation Voltage: 1.75 V

Continuous Collector Current at 25 C: 11 A