Infineon IRLS4030TRLPBF MOSFETs MOSFT 100V 180A 4.3mOhm 87nC

Width: 6.22 mm

Height: 2.3 mm

Length: 6.5 mm

Fall Time: 170 ns

Rise Time: 330 ns

Technology: Si

Unit Weight: 4 g

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 130 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 370 W

Vgs - Gate-Source Voltage: - 16 V, + 16 V

Id - Continuous Drain Current: 180 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 320 S

Rds On - Drain-Source Resistance: 4.3 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V