Infineon AUIRF7341QTR MOSFETs 自动 55V 1 N沟道 HEXFET 50毫欧

Width: 3.9 mm

Height: 1.75 mm

Length: 4.9 mm

Fall Time: 12.5 ns

Rise Time: 7.7 ns

Technology: Si

Unit Weight: 540 mg

Channel Mode: Enhancement

Configuration: Dual

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 29 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2.4 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 9.2 ns

Typical Turn-Off Delay Time: 31 ns

Id - Continuous Drain Current: 5.1 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 10.4 S

Rds On - Drain-Source Resistance: 65 mOhms

Vds - Drain-Source Breakdown Voltage: 55 V

Vgs th - Gate-Source Threshold Voltage: 3 V