Infineon AUIRFR4104TRL MOSFETs 自动 40V 1 N-沟 HEXFET 5.5毫欧

Width: 6.22 mm

Height: 2.3 mm

Length: 6.5 mm

Fall Time: 36 ns

Rise Time: 69 ns

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 59 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 140 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 17 ns

Typical Turn-Off Delay Time: 37 ns

Id - Continuous Drain Current: 119 A

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 5.5 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V