Infineon AUIRG4PH50S IGBT晶体管 1200V DC-1 KHZ (STD) 离散自动IGBT

Width: 5.31 mm

Height: 20.7 mm

Length: 15.87 mm

Technology: Si

Unit Weight: 38 g

Configuration: Single

Qualification: AEC-Q100

Mounting Style: Through Hole

Pd - Power Dissipation: 543 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.47 V

Continuous Collector Current at 25 C: 141 A