Infineon AUIRGR4045D IGBT晶体管 600V 低VCEON IGBT半桥2通道

Technology: Si

Unit Weight: 350 mg

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Pd - Power Dissipation: 77 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 1.7 V

Continuous Collector Current at 25 C: 12 A