Infineon BCM856SH6327XTSA1 双极晶体管 BJTs - 双极晶体管 AF 晶体管

Technology: Si

Unit Weight: 7.500 mg

Configuration: Dual

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 250 mW

DC Current Gain hFE Max: 630

Gain Bandwidth Product fT: 250 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: 100 mA

Maximum DC Collector Current: 200 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 200

Collector- Emitter Voltage VCEO Max: 65 V

Collector-Emitter Saturation Voltage: 250 mV