Infineon BCR196WH6327XTSA1 Pre-Biased Bipolar Transistor

Rated power: 250mW

Mounting Type: Surface Mount

Power-Maximum: 250mW

Transistor type: PNP-Prebias

Collector current: 70mA

DC electricity gain: 50@5mA|5V

Frequency-Transition: 150MHz

Resistance-Base (R1): 47kOhm

Vce Saturation (maximum): 300mV@500uA|10mA

Collector-emitter voltage: 50V

Resistance-Emitter base (R2): 22kOhm

DC current gain (hFE) (minimum): 50@5mA,5V

Current-Collector (Ic) (maximum): 70mA

Current-Collector cutoff (maximum): 100nA(ICBO)

Voltage-Collector-emitter breakdown (maximum): 50V