Infineon BF 888 H6327 射频双极功率射频双极晶体管

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: Bipolar Power

Transistor Polarity: NPN

Pd - Power Dissipation: 160 mW

Emitter- Base Voltage VEBO: 13 V

Continuous Collector Current: 30 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 250

Collector- Emitter Voltage VCEO Max: 4 V