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Technology: Si
Unit Weight: 14.305 mg
Configuration: Single
Qualification: AEC-Q100
Mounting Style: SMD/SMT
Transistor Type: Bipolar
Transistor Polarity: NPN
Pd - Power Dissipation: 55 mW
DC Current Gain hFE Max: 130
Gain Bandwidth Product fT: 25 GHz
Emitter- Base Voltage VEBO: 1.5 V
Continuous Collector Current: 12 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
Collector- Emitter Voltage VCEO Max: 4.5 V
