Infineon BFP 460 H6327 射频双极小信号射频双极晶体管

Technology: Si

Unit Weight: 6.700 mg

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Type: Bipolar

Transistor Polarity: NPN

Pd - Power Dissipation: 230 mW

DC Current Gain hFE Max: 160

Gain Bandwidth Product fT: 22 GHz

Emitter- Base Voltage VEBO: 1.5 V

Continuous Collector Current: 70 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 4.5 V