Infineon BFP 540FESD H6327 射频双极小信号射频双极晶体管

Technology: Si

Unit Weight: 1.870 mg

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Type: Bipolar

Operating Frequency: 30 GHz

Transistor Polarity: NPN

Pd - Power Dissipation: 250 mW

Emitter- Base Voltage VEBO: 1 V

Continuous Collector Current: 80 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 50

Collector- Emitter Voltage VCEO Max: 4.5 V