Infineon BFP 650 H6327 射频硅锗射频双极晶体管

Technology: SiGe

Unit Weight: 31 mg

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Type: Bipolar

Operating Frequency: 37 GHz

Pd - Power Dissipation: 500 mW (1/2 W)

Emitter- Base Voltage VEBO: 1.2 V

Continuous Collector Current: 150 mA

Collector- Emitter Voltage VCEO Max: 4 V