Infineon BFP 740F H6327 射频硅锗射频双极晶体管

Width: 0.8 mm

Height: 0.55 mm

Length: 1.4 mm

Technology: SiGe

Unit Weight: 1.870 mg

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Type: Bipolar

Operating Frequency: 42 GHz

Pd - Power Dissipation: 160 mW

DC Current Gain hFE Max: 400

Emitter- Base Voltage VEBO: 1.2 V

Collector- Base Voltage VCBO: 13 V

Continuous Collector Current: 30 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 4 V