Infineon BFP182WH6327XTSA1 射频双极晶体管 RF BIP TRANSISTORS

Technology: Si

Unit Weight: 6.730 mg

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Emitter- Base Voltage VEBO: 2 V

Continuous Collector Current: 35 mA

Maximum DC Collector Current: 35 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 70

Collector- Emitter Voltage VCEO Max: 12 V