Infineon BFP196WNH6327XTSA1 射频双极晶体管 RF BIP TRANSISTORS

Technology: Si

Unit Weight: 6.740 mg

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: Bipolar Wideband

Operating Frequency: 7.5 GHz

Transistor Polarity: NPN

Pd - Power Dissipation: 700 mW

Emitter- Base Voltage VEBO: 2 V

Continuous Collector Current: 150 mA

Maximum DC Collector Current: 150 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 70

Collector- Emitter Voltage VCEO Max: 12 V