Infineon BFP842ESDH6327XTSA1 射频硅锗射频双极晶体管
制造商Infineon(查看更多该品牌的产品)
ModelBFP842ESDH6327XTSA1
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Technology: SiGe
Unit Weight: 7 mg
Mounting Style: SMD/SMT
Transistor Type: Bipolar
Operating Frequency: 60 GHz
Pd - Power Dissipation: 120 mW
DC Current Gain hFE Max: 450
Emitter- Base Voltage VEBO: 4.1 V
Continuous Collector Current: 40 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Collector- Emitter Voltage VCEO Max: 3.25 V
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