Infineon BFR 340L3 E6327 射频双极小信号NPN硅射频晶体管

Width: 0.6 mm

Height: 0.45 mm

Length: 1 mm

Technology: Si

Unit Weight: 0.540 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: Bipolar

Operating Frequency: 14 GHz

Transistor Polarity: NPN

Pd - Power Dissipation: 60 mW

DC Current Gain hFE Max: 90 at 5 mA at 3 V

Emitter- Base Voltage VEBO: 2 V

Collector- Base Voltage VCBO: 15 V

Maximum DC Collector Current: 10 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 6 V