Infineon BFR 360F H6327 射频双极小信号射频双极晶体管

Technology: Si

Unit Weight: 1.430 mg

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Type: Bipolar

Operating Frequency: 3.5 GHz

Transistor Polarity: NPN

Pd - Power Dissipation: 210 mW

DC Current Gain hFE Max: 160

Gain Bandwidth Product fT: 14 GHz

Emitter- Base Voltage VEBO: 2 V

Continuous Collector Current: 35 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 6 V