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Width: 0.6 mm
Height: 0.45 mm
Length: 1 mm
Technology: Si
Unit Weight: 0.540 mg
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: Bipolar
Operating Frequency: 22 GHz
Transistor Polarity: NPN
Pd - Power Dissipation: 200 mW
DC Current Gain hFE Max: 90 at 20 mA at 3 V
Emitter- Base Voltage VEBO: 1.5 V
Collector- Base Voltage VCBO: 15 V
Maximum DC Collector Current: 50 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 65 C
Collector- Emitter Voltage VCEO Max: 4.5 V
