Infineon BFR 460L3 E6327 射频双极小信号NPN硅射频晶体管4.5V 50mA

Width: 0.6 mm

Height: 0.45 mm

Length: 1 mm

Technology: Si

Unit Weight: 0.540 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: Bipolar

Operating Frequency: 22 GHz

Transistor Polarity: NPN

Pd - Power Dissipation: 200 mW

DC Current Gain hFE Max: 90 at 20 mA at 3 V

Emitter- Base Voltage VEBO: 1.5 V

Collector- Base Voltage VCBO: 15 V

Maximum DC Collector Current: 50 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 4.5 V