Infineon BFR 740L3RH E6327 射频硅锗NPN硅锗射频晶体管

Width: 0.6 mm

Height: 0.45(Max) mm

Length: 1 mm

Technology: SiGe

Unit Weight: 0.500 mg

Configuration: Single

Transistor Type: Bipolar

Transistor Polarity: NPN

Pd - Power Dissipation: 160 mW

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C