Infineon BFR380L3E6327XTMA1 射频双极型晶体管 NPN 硅射频晶体管

Technology: Si

Unit Weight: 0.550 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: Bipolar

Operating Frequency: 14 GHz

Transistor Polarity: NPN

Pd - Power Dissipation: 380 mW

Emitter- Base Voltage VEBO: 2 V

Continuous Collector Current: 80 mA

Maximum DC Collector Current: 80 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 90

Collector- Emitter Voltage VCEO Max: 6 V