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Infineon BSC010NE2LSATMA1 功率MOSFET,N沟道,25伏,100安,800微欧,TDSON,表面贴装

ModelBSC010NE2LSATMA1
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No. of Pins: 8

Channel Type: N Channel

Power Dissipation: 96

Transistor Mounting: Surface Mount

Transistor Case Style: TDSON

Drain Source Voltage Vds: 25

Operating Temperature Max: 150 °C

Continuous Drain Current Id: 100

Drain Source On State Resistance: 1

Gate Source Threshold Voltage Max: 2

Datasheet


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