Infineon BSC0924NDI N沟MOSFET 30V,30V 40A,40A TISON-8

Width: 5.15 mm

Height: 1.27 mm

Length: 5.9 mm

Fall Time: 3 ns, 2.2 ns

Rise Time: 3.8 ns, 2.8 ns

Technology: Si

Unit Weight: 96.440 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 10 nC, 12.8 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2.5 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 4.7 ns, 3.3 ns

Typical Turn-Off Delay Time: 17 ns, 15 ns

Id - Continuous Drain Current: 40 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 32 S, 36 S

Rds On - Drain-Source Resistance: 3.8 mOhms, 2.8 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.2 V