Infineon BSC150N03LD G MOSFET 小信号 N 沟道 30V 20A TDSON-8 OptiMOS 3

Width: 5.15 mm

Height: 1.27 mm

Length: 5.9 mm

Fall Time: 2 ns

Rise Time: 2.2 ns

Technology: Si

Unit Weight: 100 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 13.2 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 26 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 2.7 ns

Typical Turn-Off Delay Time: 12 ns

Id - Continuous Drain Current: 20 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 18 S

Rds On - Drain-Source Resistance: 12.5 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1 V