Infineon BSC886N03LS G N沟MOSFET 30V 65A TDSON-8

Width: 5.15 mm

Height: 1.27 mm

Length: 5.9 mm

Fall Time: 3 ns

Rise Time: 3.2 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 12.7 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2.5 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 4.2 ns

Typical Turn-Off Delay Time: 18 ns

Id - Continuous Drain Current: 65 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 6 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1 V