Infineon BSD223P H6327 P型MOSFET

Width: 1.25 mm

Height: 0.9 mm

Length: 2 mm

Fall Time: 3.2 ns

Rise Time: 5 ns

Technology: Si

Unit Weight: 7.500 mg

Channel Mode: Enhancement

Configuration: Dual

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Type: 2 P-Channel

Qg - Gate Charge: 620 pC

Number of Channels: 2 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 250 mW

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 3.8 ns

Typical Turn-Off Delay Time: 5.1 ns

Id - Continuous Drain Current: 390 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 350 mS

Rds On - Drain-Source Resistance: 700 mOhms, 1.27 Ohms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1.2 V