Infineon BSL606SN H6327 MOSFETs N沟道 60V 4.5A TSOP-6

Width: 1.5 mm

Height: 1.1 mm

Length: 3 mm

Fall Time: 3.1 ns

Rise Time: 3 ns

Technology: Si

Unit Weight: 112.430 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 3.7 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 6.8 ns

Typical Turn-Off Delay Time: 18 ns

Id - Continuous Drain Current: 4.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 7.1 S

Rds On - Drain-Source Resistance: 69 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 1.8 V