Infineon BSL802SNH6327XTSA1 MOSFET

Vgs(th): 0.75 V

Vgs (Max): 8V

Gate Charge (Qg): 4.7nC

Power consumption: 2W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 20V

Continuous drain current: 7.5A

Input Capacitance (Ciss): 1347pF

Operating temperature range: -55 to 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 22mOhm

Drive Voltage (Max Rds On, Min Rds On): 1.8|2.5V

Datasheet