Infineon BSM150GB120DN2 IGBT 硅模块 1200V 150A 双路

Width: 61.4 mm

Height: 30 mm

Length: 106.4 mm

Technology: Si

Unit Weight: 363.080 g

Configuration: Half Bridge

Mounting Style: Screw Mount

Pd - Power Dissipation: 1.25 kW

Gate-Emitter Leakage Current: 320 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 2.5 V

Continuous Collector Current at 25 C: 210 A