Infineon BSP125 H6433 MOSFET N沟道 600V 120mA SOT-223-3

Width: 3.5 mm

Height: 1.6 mm

Length: 6.5 mm

Fall Time: 110 ns

Rise Time: 14.4 ns

Technology: Si

Unit Weight: 113.500 mg

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 4.4 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.8 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 7.7 ns

Typical Turn-Off Delay Time: 20 ns

Id - Continuous Drain Current: 120 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 60 mS

Rds On - Drain-Source Resistance: 25 Ohms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 1.9 V