Infineon BSS169IXTSA1 功率MOSFET，N沟道，100V，190mA，2.9欧姆，SOT-23，贴片式

Channel Type: N Channel

Power Dissipation: 360

Transistor Mounting: Surface Mount

Transistor Case Style: SOT-23

Drain Source Voltage Vds: 100

Operating Temperature Max: 150 °C

Continuous Drain Current Id: 190

Drain Source On State Resistance: 2.9

Gate Source Threshold Voltage Max: 1.8

Datasheet