Infineon BSS7728NH6327XTSA2 MOSFET小信号N沟

Width: 1.3 mm

Height: 1.1 mm

Length: 2.9 mm

Fall Time: 9 ns

Rise Time: 2.7 ns

Technology: Si

Unit Weight: 8 mg

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 1 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 360 mW

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 2.7 ns

Typical Turn-Off Delay Time: 6.1 ns

Id - Continuous Drain Current: 200 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 100 mS

Rds On - Drain-Source Resistance: 4.3 Ohms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 1.3 V