Infineon BSZ011NE2LS5IATMA1 沟槽型MOSFET <= 40V

Fall Time: 3 ns

Rise Time: 4 ns

Technology: Si

Unit Weight: 38.760 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 37 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 69 W

Vgs - Gate-Source Voltage: - 16 V, + 16 V

Typical Turn-On Delay Time: 5 ns

Typical Turn-Off Delay Time: 26 ns

Id - Continuous Drain Current: 40 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 80 S

Rds On - Drain-Source Resistance: 1.1 mOhms

Vds - Drain-Source Breakdown Voltage: 25 V

Vgs th - Gate-Source Threshold Voltage: 2 V