Infineon DF120R12W2H3_B27 IGBT 硅模块 1200 V，120 A 增压型 IGBT 模块
制造商Infineon(查看更多该品牌的产品)
ModelDF120R12W2H3_B27
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Technology: Si
Unit Weight: 36 g
REACH - SVHC: Details
Configuration: 3-Phase Inverter
Pd - Power Dissipation: 180 W
Gate-Emitter Leakage Current: 100 nA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Collector-Emitter Saturation Voltage: 2.05 V
Continuous Collector Current at 25 C: 50 A
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