Infineon DF120R12W2H3B27BOMA1 IGBT模块 N沟道 1200V 40A
制造商Infineon(查看更多该品牌的产品)
ModelDF120R12W2H3B27BOMA1
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IGBT Technology: IGBT 3 High Sp
IGBT Termination: Press Fit
Power Dissipation: 180
IGBT Configuration: Triple
Transistor Mounting: Clamp Mount
Transistor Case Style: Module
Operating Temperature Max: 150 °C
Continuous Collector Current: 50
Collector Emitter Voltage Max: 1.2
Collector Emitter Saturation Voltage: 2.05
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